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Photo-Response Elimination of amorphous InGaZnO Thin Film Transistors by
Introducing a Mo-doped-ZnO Passivation Layer
藉由氧化鋅鉬保護層以消滅非晶態銦鎵鋅氧化物薄模電晶體的光激發效應
Yun-Chu Tsai (蔡韻竹)1, Min-Yen Tsai (蔡旻諺)2, Li-Feng Teng (鄧立峯)1, Po-Tsun Liu (劉柏村)2
and Han-Ping D. Shieh (謝漢萍)2
1Dept. of Photonics & Institute of Electro-Optical Engineering, NCTU, Hsinchu, Taiwan
2Dept. of Photonics & Display Institute, NCTU, Hsinchu, Taiwan
+E-mail: yct.eo98g@nctu.edu.tw
Developments of a-IGZO TFTs in transparent electronics are limited by the photosensitivity of a-IGZO TFTs. In this study, a
decent passivation layer, MZO is applied to a-IGZO TFTs and efficiently eliminates the deep sub-gap DOS which results in
serious photo-response. After the experiments, MZO-passivated TFTs exhibit the negligible ΔVth (ΔVth < 1V ). Consequently,
the photosensitivity issue of a-IGZO was successfully improved by 90% compared to un-passivated devices by introducing
MZO passivation layers in the UV-light and visible light region. The deposition process of MZO is the same as that of a-IGZO
thin films and the channel regimes of devices remain high transmittance due to the transparency of MZO. Whereas the detail
of the interface effect induced by MZO passivation in a-IGZO TFTs is needs to be further study.
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