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Photo-Response Elimination of amorphous InGaZnO Thin Film Transistors by
Introducing a Mo-doped-ZnO Passivation Layer
Yun-Chu Tsai (蔡韻竹)1, Min-Yen Tsai (蔡旻諺)2, Li-Feng Teng (鄧立峯)1, Po-Tsun Liu (劉柏村)2
and Han-Ping D. Shieh (謝漢萍)2
1Dept. of Photonics & Institute of Electro-Optical Engineering, NCTU, Hsinchu, Taiwan
2Dept. of Photonics & Display Institute, NCTU, Hsinchu, Taiwan
Developments of a-IGZO TFTs in transparent electronics are limited by the photosensitivity of a-IGZO TFTs. In this study, a
decent passivation layer, MZO is applied to a-IGZO TFTs and efficiently eliminates the deep sub-gap DOS which results in
serious photo-response. After the experiments, MZO-passivated TFTs exhibit the negligible ΔVth (ΔVth < 1V ). Consequently,
the photosensitivity issue of a-IGZO was successfully improved by 90% compared to un-passivated devices by introducing
MZO passivation layers in the UV-light and visible light region. The deposition process of MZO is the same as that of a-IGZO
thin films and the channel regimes of devices remain high transmittance due to the transparency of MZO. Whereas the detail
of the interface effect induced by MZO passivation in a-IGZO TFTs is needs to be further study.
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